Laos

Diode: rectifying | SMD | 1kV | 1.5A | 4us | DO214AC,SMA | Ufmax: 1.15V

7 tööpäeva

Vishay Avalanche Diode Byg10M-E3/Tr Enclosure Type (Semiconductors) Do 214Ac Reverse Voltage U(R) 1000 V Forward Current I(F) 1.5 A

Laos

Diode: rectifying | SMD | 1kV | 1.5A | 4us | DO214AC,SMA | Ufmax: 1.15V

7 tööpäeva

Vishay Avalanche Diode Byg10M-E3/Tr Enclosure Type (Semiconductors) Do 214Ac Reverse Voltage U(R) 1000 V Forward Current I(F) 1.5 A